dm t10h015l cg document number: d s 38362 rev. 3 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated d mt10h015l cg 100v n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d t c = + 25c 100 v 1 5 m? @ v gs = 10 v 34 a 19.5 m? @ v gs = 6 v 32 a description and applications t his new generation n - channel enhancement mode mosfet is designed to minimize r ds( on ) and yet maintain superior switching performance. this device is ideal for use in notebook battery power management and loadswitch. . ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? 100% unclamped inductive switch (uis) t est in p roduction ? high conversion efficiency ? low r ds( on ) C minimizes on state losses ? low input capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: v - dfn3333 - 8 (type b) ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish - matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 0 27 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm t10h015 l cg - 7 v - dfn3333 - 8 (type b) 2 , 0 00 /tape & reel dmt10h015l cg - 13 v - dfn3333 - 8 (type b) 3,000 /tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information top view internal schematic t op view d s g equivalent circuit t10 = product type marking code yyww = date code marking yy = year (ex: 16 = 20 1 6 ) ww = week (01 to 53) g s s s d d d d pin 1 bottom view
dm t10h015l cg document number: d s 38362 rev. 3 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated d mt10h015l cg maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 10 0 v gate - source voltage v gss 20 v continuous drain current , v gs = 10 v (note 6 ) s teady state t a = + 25 ? a = + 70 ? d 9.4 7.5 a continuous drain current , v gs = 10 v s teady state t c = + 25 ? c = + 100 ? d 34 21 a maximum continuous body diode f orward current (note 6 ) i s 1.6 a pulsed drain current ( 10 ? dm 54 a avalanche current , l = 3mh (note 8 ) i a s 7.5 a avalanche energy , l = 3mh (note 8) e a s 85 mj thermal characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit total power dissipation (note 5 ) p d 1 w thermal resistance, junction to ambient (note 5 ) r ? ja 118 c/w total power dissipation (note 6 ) p d 2.1 w thermal resistance, junction to ambient (note 6 ) r ? ja 59 c/w thermal resistance, junction to case r ? j c 4.5 c/w operating and storage temperature range t j, t stg - 5 5 to + 15 0 c electrical characteristics ( @t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 100 gs = 0v, i d = 1m a zero gate voltage drain current i dss ds = 80 v, v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 1.4 2 3. 5 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) gs = 10 v, i d = 20 a gs = 6 v, i d = 20 a gs = 4.5 v, i d = 5 a diode forward voltage v sd gs = 0v, i s = 20 a dynamic characteristics (note 8 ) input capacitance c iss ds = 50 v, v gs = 0v f = 1mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? d d = 50 v, i d = 10 a , v gs = 10 v gate - source charge q gs gd d( on ) dd = 50 v, v gs = 10 v, i d = 10 a , r g = 6 r d( off ) f rr f = 10 a, di/dt = 10 0a/ s reverse recovery charge q rr notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm t10h015l cg document number: d s 38362 rev. 3 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated d mt10h015l cg 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs = 6.0v v gs = 4.0v v gs = 3.5v v gs = 4.5v v gs = 10.0v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 4.5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5v - 55 25 85 125 150 0.005 0.01 0.015 0.02 0.025 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ) i d , drain - source current (a) f igure 3. typical on - resistance vs. drain current and gate voltage v gs = 10v v gs = 4.5v v gs = 6v 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 5a i d = 20a 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 4.5v, i d = 5a v gs = 6v, i d = 20a v gs = 10v, i d = 20a 0 0.005 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature - 55 25 85 150 125 v gs = 10v
dm t10h015l cg document number: d s 38362 rev. 3 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated d mt10h015l cg 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c 1 10 100 1000 10000 0 10 20 30 40 50 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 5 10 15 20 25 30 35 v gs (v) q g (nc) figure 11. gate charge v ds = 50v, i d = 10a 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area p w =10s p w =10ms p w =100 s dc r ds(on) limited p w =1ms p w =100ms t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = 10v p w =1s 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 0 0.01 0.02 0.03 0.04 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 4.5v, i d = 5a v gs = 6v, i d = 20a v gs = 10v, i d = 20a
dm t10h015l cg document number: d s 38362 rev. 3 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated d mt10h015l cg 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 r ja (t) = r(t) * r ja r ja = 120 /w duty cycle, d = t1 / t2 d=0.7
dm t10h015l cg document number: d s 38362 rev. 3 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated d mt10h015l cg package outline dimensions please see http://www.diodes.com/ package - outlines.html for the latest version. v - dfn3333 - 8 (type b) v - dfn3333 - 8 (type b) dim min max typ a 0.75 ? ? a1 0.00 0.05 0.02 a3 -- -- 0.203 b 0.27 0.37 0.32 d 3.25 3.35 3.30 d2 2.17 2.37 2.27 e 3.25 3.35 3.30 e2 1.85 2.05 1.95 e -- -- 0.65 k -- -- 0.33 l 0.35 0.45 0.40 l1 -- -- 0.34 z -- -- 0.515 all dimensions in mm suggested pad layout please see http://www.diodes.com/ package - outlines.html for the latest version. v - dfn3333 - 8 (type b) dimensions value (in mm) c 0.650 c1 1.950 g 0.650 x 0.420 x1 2.370 y 0.700 y1 0.400 y2 2.150 y3 0.450 l1 k a a1 a3 d e e b l e2 d2 z seating plane y2 x1 y3 y1 g c c1 x y
dm t10h015l cg document number: d s 38362 rev. 3 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated d mt10h015l cg important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united s tates, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. thi s document is written in english but may be translated into multiple languages for reference. only the english version of th is document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cu stomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requiremen ts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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